10.1063/1.1558996CrossRef 20. Liu J, Lee T, Janes DB, Walsh BL, Melloch MR, Woodall JM, Reifenberger R, Andres RP: Guided self-assembly of Au nanocluster arrays electronically coupled to semiconductor device layers. https://www.selleckchem.com/products/cb-839.html Appl Phys Lett 2000, 77:373.CrossRef 21. Marie-Christine D, Didier A: Gold nanoparticles: assembly, supramolecular chemistry, quantum-size-related properties, and applications toward biology, catalysis, and nanotechnology. Chemical Reviews 2004, 104:293–346. 10.1021/cr030698+CrossRef 22. Schaadt DM, Feng B, Yu ET: Enhanced semiconductor optical absorption via surface plasmon excitation in metal nanoparticles. Appl Phys Lett 2005, 86:063106. 10.1063/1.1855423CrossRef
23. Bing W, Haiqian W, Huixiang L, Changgan Z, Hou JG, Xudong X: Tunable single-electron tunneling behavior of ligand-stabilized gold particles on self-assembled monolayers. Physical Review B 2000, 63:035403.CrossRef 24. Donnelly T, Krishnamurthy S, Carney K, McEvoy N, Lunney JG: Pulsed laser deposition of nanoparticle films of Au. Appl Surf Sci 2007, 254:1303. 10.1016/j.apsusc.2007.09.033CrossRef 25. Ruffino F, Grimaldi MG: Formation of patterned arrays of Au nanoparticles on SiC surface by template AR-13324 confined dewetting JIB04 manufacturer of normal and
oblique deposited nanoscale films. Thin Solid Film 2013, 536:99.CrossRef 26. Fortuna SA, Xiuling L: Metal-catalyzed semiconductor nanowires: a review on the control of growth directions. Semicond Sci Tech 2010, 25:024005. 10.1088/0268-1242/25/2/024005CrossRef 27. Wacasera BA, Depperta K, Karlssonb LS, Samuelsona L, Seifert W: Growth and characterization of defect free GaAs nanowires. J Cryst Growth PIK3C2G 2006, 287:504. 10.1016/j.jcrysgro.2005.11.075CrossRef 28. Fortuna SA, Jianguo W, Ik Su C, Xiuling L: Planar GaAs nanowires on GaAs (100) substrates: self-aligned, nearly twin-defect free, and transfer-printable. Nano Lett 2008, 8:4421. 10.1021/nl802331mCrossRef 29. Yuan Z, Nomura KI, Nakano A: A core/shell mechanism for stacking-fault generation in GaAs nanowires. Appl Phys Lett 2012,
100:163103. 10.1063/1.3703765CrossRef 30. Shtrikman H, Popovitz-Biro R, Kretinin A, Heiblum M: Stacking-faults-free zinc blende GaAs nanowires. Nano Lett 2009, 9:1506. 10.1021/nl803524sCrossRef 31. Ghosh SC, Kruse P, LaPierre RR: The effect of GaAs(100) surface preparation on the growth of nanowires. Nanotechnology 2009, 20:115602. 10.1088/0957-4484/20/11/115602CrossRef 32. Zhenyu Z, Lagally MG: Atomistic processes in the early stages of thin-film growth. Science 1997, 276:377–383. 10.1126/science.276.5311.377CrossRef 33. Ruffino F, Torrisi V, Marletta G, Grimaldi MG: Effects of the embedding kinetics on the surface nano-morphology of nano-grained Au and Ag films on PS and PMMA layers annealed above the glass transition temperature. Appl Phys A 2012, 107:669–683.CrossRef 34.
No related posts.