Appl Phys Lett 1999, 75:4001–4003. 10.1063/1.125519CrossRef 7. Hubbard KJ, Schlom DG: Thermodynamic stability of binary oxides in contact with silicon. J Mater Res 1996, 11:2757–2776. 10.1557/JMR.1996.0350CrossRef 8. Cheng B,
Min C, Rao R, Inani A, Vande Voorde P, Greene WM, Stork JMC, EPZ015938 cell line Zhiping Y, Zeitzoff PM, Woo JCS: The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs. IEEE Trans Electron Devices 1999, 46:1537–1544. 10.1109/16.772508CrossRef 9. Balog M, Schieber M, Michiman M, Patai S: Chemical vapor Lazertinib deposition and characterization of HfO 2 films from organo-hafnium compounds. Thin Solid Films 1977, 41:247–259. 10.1016/0040-6090(77)90312-1CrossRef 10. Wilk GD, Wallace RM, Anthony JM: High-κ gate dielectrics: current status and materials properties considerations. J Appl Phys 2001, 89:5243–5276. 10.1063/1.1361065CrossRef 11. Balog M, Schrieber M, Patai S, Michman M: Thin films of metal oxides on silicon by chemical vapor deposition with organometallic compounds. I. J Cryst Growth 1972, 17:298–301.CrossRef 12. Cameron MA, George SM: ZrO 2 film growth by chemical vapor deposition using zirconium tetra-tert-butoxide. Thin Solid Films 1999, 348:90–98. 10.1016/S0040-6090(99)00022-XCrossRef Foretinib order 13. Zhu J, Li TL, Pan B, Zhou L, Liu
ZG: Enhanced dielectric properties of ZrO 2 thin films prepared in nitrogen ambient by pulsed laser deposition. J Phys D : Appl Phys 2003, 36:389–393. 10.1088/0022-3727/36/4/310CrossRef 14. Manory RR, Mori T, Shimizu I, Miyake S, Kimmel G: Growth and structure control of HfO 2-x films with cubic and tetragonal structures obtained by ion beam assisted deposition. J Vac Sci Technol A 2002, 20:549–554. 10.1116/1.1453453CrossRef 15. Kukli K, Ritala M, Leskelae M, Sajavaara T, Keinonen
J, Jones AC, Roberts JL: Atomic layer deposition of hafnium dioxide films using hafnium bis(2-butanolate)bis(1-methoxy-2-methyl-2-propanolate) Amobarbital and water. Chem Vap Deposition 2003, 9:315–320. 10.1002/cvde.200306263CrossRef 16. Endo K, Tatsumi T: Metal organic atomic layer deposition of high-k gate dielectrics using plasma oxidation. Jpn J Appl Phys 2003, 42:L685-L687. 10.1143/JJAP.42.L685CrossRef 17. Kukli K, Ritala M, Sajavaara T, Kemonen J, Leskla M: Comparison of hafnium oxide films grown by atomic layer deposition from iodide and chloride precursors. Thin Solid Films 2002, 416:72–79. 10.1016/S0040-6090(02)00612-0CrossRef 18. Lysaght PS, Foran B, Bersuker G, Chen PL, Murto RW, Huff HR: Physicochemical properties of HfO 2 in response to rapid thermal anneal. Appl Phys Lett 2003, 82:1266–1268. 10.1063/1.1553998CrossRef 19. Asuha HK, Maida O, Takahashi M, Iwasa H: Nitric acid oxidation of Si to form ultrathin silicon dioxide layers with a low leakage current density. J Appl Phys 2003, 94:7328–7335. 10.1063/1.1621720CrossRef 20.
No related posts.